DESIGN
The halls of PCIM Europe were buzzing with updates on GaN and SiC devices for industrial, automotive, and consumer applications. Caroline Hayes reports on the ecosystems bringing wide bandgap semiconductor technology to market. Ecosystems put down roots for the power industry
A ddressing GaN developments first, at this year’s show, EPC showed its latest GaN-based inverter reference design. Based on its EPC2302 eGaN FETs, the EPC9186 reference design demonstrates the suitability of GaN for high power motor applications in equipment, vehicles, and drones, says the company. The reference design is for motor system performance, range, precision, and torque in high power applications, such as electric scooters, small electric vehicles, agricultural machinery, forklifts, and drones. The 150A RMS three-phase BLDC motor drive inverter uses four EPC2302 eGaN FETs and the reference design supports a wide input range of 14 to 80V, suitable for the high power applications in machinery and high power drones, advises EPC. The reference design showcases the benefits of a GaN-based motor drive, such
as lower distortion for lower acoustic noise, lower current ripple for reduced magnetic loss, lower torque ripple for improved precision, and lower filtering to lower the cost of the final design. EPC also offers the GaN Power Bench cross reference tool to help designers interested in replacing silicon MOSFETs with a GaN device in a design project. Suggested replacements are based on a design's operating conditions.
EPC's inverter reference design
16 ELECTRONICSPECIFIER.COM
Powered by FlippingBook