DESIGN
POWER: PCIM REVIEW
HEMTs in 8.0 x 8.0mm DFN packages. The InnoGaN HEMTs switch at a higher frequency, with efficiencies of 99% allowing a reduction in the size of the filter and therefore the converter. It also negates the need for snubber capacitors or SiC diodes, reducing system cost, says the company. Data centre power At GaN Systems, the stand was divided into four market areas: consumer, industrial, data centre, and automotive. CEO Jim Witham pointed out the evolution of data centre power supplies and the benefits of smaller, efficient power supplies for factors such as operational costs as well as sustainability. Advances in 2023, says Witham, include using the GaN ICs with topologies that optimise heat transfer, daughterboards for heat syncing and reducing the size of transformers, magnetics and capacitors used in power supplies to harness the power of GaN to achieve more power and efficiency in smaller form factors. For data centres, the industry is demanding 50% more power and more efficiency for energy savings, as well as more servers per rack for space savings. “Customers implementing GaN Systems’ power semiconductors in their PSUs are seeing a continual increase in PSU power density from 45W/in3 to 63/in3, 82/in3, and now to 100W/in3,” Witham said. The company has announced its collaboration with xFusion Digital Technologies for what is believed to be
There was an update on Cambridge GaN Devices’ ICeGaN HEMT family, with the second generation of 650V devices. According to Nare Gabrielyan, the company’s Product Marketing Manager, the H2 series of GaN HEMTs features the NL3 (no load, light load) circuit integrated alongside the GaN switch for low power losses. Target applications are consumer products, such as fridges or phone chargers, said Gabrielyan, where they reduce size and weight of the end product by eliminating complex circuitry and delivering a QG that is 10 times lower than silicon parts and QOSS which is five times less to reduce switching losses at high switching frequencies. The smart gate interface virtually eliminates typical e-mode GaN weaknesses to improve robust over-voltage performance, high noise immunity, dV/ dt suppression and ESD protection. An integrated Miller clamp eliminates the need for negative gate voltages, achieving true zero-volt turn-off and improving dynamic R DS(ON) .
Innoscience's reference design
A prototype reference, jointly developed with Switzerland’s University of Bern was on display at the Innoscience Technology stand. The multi-level topology reference demo addresses 850V DC applications using 650V GaN in place of 1200V SiC, explained Innoscience’s General Manager, Europe, Dr Denis Marcon. The prototype, for use in e-mobility motor drivers, solar and industrial inverters, EV fast chargers and EV drivetrains, is currently with selected customers and will be available within six months. The three-level active neutral point clamped (ANPC) converter uses six Innoscience INN650D080BS 650V, 80m Ω
GaN Systemand xFusion Digital Technologies
17 ELECTRONICSPECIFIER.COM
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